Thermal-wave measurements of ion implanted silicon-Reference-Cited by-同舟云学术

Thermal-wave measurements of ion implanted silicon

Published:1987-01 Issue:1-4 Volume:21 Page:550-553
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kirby Bradford J.,Larson Lawrence A.,Liang Ru-Yu

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

2. The Stopping and Range of Ions in Solids;Ziegler,1985

3. W.L. Smith, private communication.

4. Ion Implantation Equipment & Techniques;Current,1985

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3. Chapter 4 Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of Defects;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997

5. Sources of variation in therma wave measurements of ion implanted wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04