Damage and its rapid thermal annealing kinetics in Ar+ ion implanted Cz silicon-Reference-Cited by-同舟云学术

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Damage and its rapid thermal annealing kinetics in Ar+ ion implanted Cz silicon

Published:1993-04 Issue:1-2 Volume:74 Page:275-278
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hahn S.,Hara T.,Maekawa T.,Satoh N.,Kwon Y.-K.,Kim K.-I.,Bae Y.-H.,Chung W.-J.,McIntyre E.K.,Smith W.L.,Larson L.,Meinecke R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference3 articles.

1. Modulated optical reflectance measurements on amorphous silicon layers and detection of residual defects

2. Defect Control in Semiconductors;Hara,1990

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron Beam Study of Defects Induced in Ar-Implanted Si;Materials Science Forum;2004-01

2. Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates;Journal of The Electrochemical Society;1998-05-01

3. Electrically active defects due to end-of-ion-range damage in silicon irradiated with MeV Ar+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05

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