Deep-level transient spectroscopy studies of 2.0 MeV 16O+ ion implanted n-InP-Reference-Cited by-同舟云学术

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Deep-level transient spectroscopy studies of 2.0 MeV 16O+ ion implanted n-InP

Published:1991-07 Issue: Volume:59-60 Page:623-626
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tin C.C.,Barnes P.A.,Bardin T.T.,Pronko J.G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Evidence for low surface recombination velocity onn‐type InP

2. Electrical properties of SiO2 and Si3N4 dielectric layers on InP

3. The electrical characteristics of ion implanted compound semiconductors

4. Doping of III–V compound semiconductors by ion implantation

5. Electrical properties of Fe-doped semi-insulating InP after proton bombardment and annealing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep Level Transient Spectroscopy;Characterization of Materials;2012-05-18

2. Deep-Level Transient Spectroscopy;Characterization of Materials;2002-10-15

3. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

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