A 2 MV heavy ion Van de Graaff implanter for research and development-Reference-Cited by-同舟云学术

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A 2 MV heavy ion Van de Graaff implanter for research and development

Published:1993-04 Issue:1-2 Volume:74 Page:27-31
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hemment P.L.F.,Sealy B.J.,Stephens K.G.,Mynard J.E.,Jeynes C.,Browton M.D.,Wilson R.J.,Ma M.X.,Cansell A.,Mous D.J.W.,Koudijs R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. New Technologies in Ion Implantation;Current,1992

2. High energy ion implantation

3. Features and applications of a versatile megavolt ion accelerator

4. A 1 and 2 MV ion implantation facility

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and characterization of Si/SiO2multilayer structures by oxygen ion implantation into silicon;Journal of Applied Physics;1996-11

2. Structural and Compositional Characterization of High Energy Separation by Implantation of Oxygen Structures Using Infrared Spectroscopy;Journal of The Electrochemical Society;1996-09-01

3. Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon;Journal of Applied Physics;1995-01-15

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