Critical problems of ion implantation in processing small geometry integrated devices-Reference-Cited by-同舟云学术

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Critical problems of ion implantation in processing small geometry integrated devices

Published:1989-02 Issue: Volume:37-38 Page:744-748
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tokuyama Takashi

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Int. Solid State Circuit Conf.;Inoue,1988

2. 17th Symp. Ion Implantation and Submicron Fabrication;Shukuri,1986

3. Technical Digest, Int. Electron Devices Meeting;Fair,1987

4. these Proceedings 7th Int. Conf. on Ion Implantation Technology;Tamura,1989

5. 1987 Symp. on VLSI Technology, Digest of Tech. Papers;Miyake,1987

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of extended defects on transient boron diffusion in ion-implanted silicon;Materials Science and Engineering: B;1992-02

2. A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters;MRS Proceedings;1992

3. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08

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