Precipitation kinetics in silicon during ion beam synthesis of buried silicide layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
2. Modeling of helium effects in metals: High temperature embrittlement
3. Mechanisms controlling high temperature embrittlement due to helium
4. Ion beam synthesis of cobalt silicide: effect of implantation temperature
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2. Nucleation and growth of cobalt disilicide precipitates during in situ transmission electron microscopy implantation;Journal of Applied Physics;2008-08
3. Significance of lognormal nanocrystal size distributions;Physical Review B;2006-03-15
4. Synthesis of Lead Chalcogenide Nanocrystals by Sequential Ion Implantation in Silica;The Journal of Physical Chemistry B;2005-09-24
5. Evolution of CoSi2 buried structures created by high temperature Co+ ion implantation into Si(100) during post-implantation annealing;Surface Science;2003-12
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