Ion implantation and annealing of Fe for semi-insulating layers formation in InP-Reference-Cited by-同舟云学术

Ion implantation and annealing of Fe for semi-insulating layers formation in InP

Published:1993-01 Issue: Volume:80-81 Page:773-776
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gasparotto A.,Carnera A.,Arzenton G.,Tromby M.,Pellegrino S.,Vidimari F.,Caldironi M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Semi‐insulating properties of Fe‐implanted InP. I. Current‐limiting properties ofn+‐semi‐insulating‐n+structures

2. Current confinement and leakage currents in planar buried-ridge-structure laser diodes on n-substrate

3. Ion implantation for isolation of III-V semiconductors

4. High-resistivity layers in n-InP produced by Fe ion implantation

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1. Zinc and group V element co-implantation in indium phosphide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05

2. Electron-microscopy study of Fe-implanted InP;Applied Physics A Materials Science & Processing;1996-01

3. CHANNELING AND TEM ANALYSIS OF RADIATION DAMAGE IN ION IMPLANTED AND PULSE ELECTRON BEAM ANNEALED InP;Ion Beam Modification of Materials;1996

4. Category II and Category III Defects in 200 KEV Fe Implanted InP;Materials Science Forum;1995-11

5. MeV energy implantation of Fe in InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03