Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysis

Author:

Samitier J.,Martinez S.,Pérez-Rodríguez A.,Garrido B.,Morante J.R.,Papon A.M.,Margail J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference29 articles.

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2. Dielectric breakdown wearout limitation of thermally-grown thin-gate oxides

3. Proc. EMRS Spring Meeting;Margail,1992

4. Proc. 7th Europ. Conf. on Insulating Films on Semiconductors;Samitier,1991

5. Monitoring of SIMOX layer properties and implantation temperature by optical measurements

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Optical Spectroscopy of SOI Materials;Perspectives, Science and Technologies for Novel Silicon on Insulator Devices;2000

2. Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds;Journal of Applied Physics;1997-02-15

3. Comparative Study of SIMOX Structures Using Four Analytical Techniques;Surface and Interface Analysis;1996-04

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