Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wires
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Theoretical Gain of Quantum-Well Wire Lasers
3. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
4. Mass and dose dependence of ion‐implantation‐induced intermixing of GaAs/GaAlAs quantum‐well structures
5. Carrier confinement potential in quantum-well wires fabricated by implantation-enhanced interdiffusion in the GaAs-Ga1−xAlxAs system
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Radiation Effects in Quantum Dot Structures;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
2. Room‐temperature operation of intermixed GaAs/AlGaAs gain coupled distributed feedback lasers;Applied Physics Letters;1995-08-14
3. Gain coupled distributed feedback lasers realized by masked implantation enhanced intermixing;Applied Physics Letters;1994-12-19
4. Quantum Dots and Quantum Wires with High Optical Quality by Implantation-Induced Intermixing;Japanese Journal of Applied Physics;1993-12-30
5. GaAs/AlGaAs quantum dots by implantation induced intermixing;Applied Physics Letters;1993-09-06
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