Author:
Wendler E.,Schrempel F.,Müller P.,Gärtner K.,Wesch W.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
8 articles.
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1. Defects and mechanical properties in weakly damaged Si ion implanted GaAs;Physical Review B;2019-06-24
2. Considerations about PIXE analysis under channeling conditions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-10
3. Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated6H−SiC;Physical Review B;2001-09-10
4. Monte Carlo simulation of particle-induced X-ray emission channeling spectra of GaAs crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-07
5. Determination of lattice displacements in Se implanted InP by RBS and PIXE channeling experiments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03