Germanium implantation into amorphous silicon films-Reference-Cited by-同舟云学术

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Germanium implantation into amorphous silicon films

Published:1995-12 Issue:1-4 Volume:106 Page:257-261
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ershov Alexey V.,Ezhevskii Alexander A.,Khokhlov Alexander F.,Khokhlov Dmitri A.,Mashin Alexander I.,Mashin Nikolay I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. The Physics of Hydrogenated Amorphous Silicon I;Knights,1984

2. Substitutional doping of amorphous silicon

3. The Physics of Hydrogenated Amorphous Silicon I;Carlson,1984

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photo-Seebeck measurement of Bi-doped amorphous germanium telluride oxide film;Journal of Materials Science: Materials in Electronics;2023-03

2. Doping and impurity compensation by ion implantation in a-SiGe films;Semiconductors;1998-10

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