Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
8 articles.
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1. P-type doping of GaAs by carbon implantation;Journal of Electronic Materials;1994-04
2. Ion implantation in gallium arsenide MESFET technology;IEEE Transactions on Electron Devices;1992
3. Compensation phenomena in GaAs implanted with 1 MeV silicon ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
4. Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
5. Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETs;IEEE Transactions on Electron Devices;1991-03