Structural investigation of Al2O3 formed by ion implantation at various doses-Reference-Cited by-同舟云学术

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Structural investigation of Al2O3 formed by ion implantation at various doses

Published:1989-03 Issue:1-4 Volume:39 Page:670-674
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pawar P.S.,Kothari D.C.,Narsale A.M.,Raole P.M.,Gogawale S.V.,Guzman L.,Girardi S.,Dapor M.,Anderle M.,Canteri R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Some preliminary studies of the structure of ion bombarded thin films

2. Ion Implantation in Semiconductors;Auciello,1977

3. Synthesis of Al2O3 by ion implantation of oxygen into aluminium

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure Evolution in Nitrogen Implanted Sapphire;Advanced Materials Research;2011-07

2. Optical property modification of ruby and sapphire by N-ion implantation;Surface and Coatings Technology;2005-06

3. XRD, ESCA and C–V investigations of Al2O3 SiO2 composite thin films synthesized by high dose oxygen ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-10

4. Study of aluminium oxide films formed by plasma anodization;Thin Solid Films;1990-12

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