Ion-beam induced relaxation of strained GexSi1−x layers-Reference-Cited by-同舟云学术

Ion-beam induced relaxation of strained GexSi1−x layers

Published:1995-03 Issue:1-2 Volume:96 Page:276-280
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kringhøj P.,Glasko J.M.,Elliman R.G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

2. Structure, properties and applications of GexSi1-xstrained layers and superlattices

3. Low-Temperature Length Change Measurements of Electron-Irradiated Germanium and Silicon

4. Dimpling—A new manifestation of ion-produced lattice damage

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain effects in Ge surface cascades;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04

2. Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

3. Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

4. Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature;Applied Physics Letters;1998-08-10

5. Ion Irradiation of GeSi/Si Strained-Layer Heterostructures;MRS Proceedings;1998