Effects of BIAS on radiation induced defects in mos oxides: An ESR study
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Theoretical study using density functional theory of defects in amorphous silicon dioxide;Journal of Non-Crystalline Solids;1999-04
2. Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films;Applied Physics Letters;1998-10-12
3. What can electron paramagnetic resonance tell us about the Si/SiO[sub 2] system?;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
4. Quantitative model of radiation induced charge trapping in SiO/sub 2/;IEEE Transactions on Nuclear Science;1997-12
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