Author:
Wielunski L.S.,Kwietniak M.S.,Pain G.N.,Rossouw C.J.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Backscattering Spectrometry;Chu,1978
2. Materials Analysis by Ion Channeling;Feldman,1982
3. Channeling analysis of disorder structure in neon implanted silicon
4. Epitaxy of Semiconductor Layered Structures;Wielunski,1988
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3. Zone-axis back-scattered electron contrast for fast electrons;Philosophical Magazine A;1994-12
4. Electric Field Induced De-channeling in LiNbO3;MRS Proceedings;1993
5. Ion beam damage in epitaxially grown MCT on GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-02