Polarity determination of epitaxial structures of CdTe on GaAs by channeling techniques-Reference-Cited by-同舟云学术

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Polarity determination of epitaxial structures of CdTe on GaAs by channeling techniques

Published:1990-01 Issue:1-4 Volume:45 Page:459-463
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wielunski L.S.,Kwietniak M.S.,Pain G.N.,Rossouw C.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Backscattering Spectrometry;Chu,1978

2. Materials Analysis by Ion Channeling;Feldman,1982

3. Channeling analysis of disorder structure in neon implanted silicon

4. Epitaxy of Semiconductor Layered Structures;Wielunski,1988

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparison of the analysis of non-centrosymmetric materials based on ion and electron beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-09

2. Polarity determination and control of SiC grown on Si;Materials Science and Engineering: B;2009-11

3. Zone-axis back-scattered electron contrast for fast electrons;Philosophical Magazine A;1994-12

4. Electric Field Induced De-channeling in LiNbO3;MRS Proceedings;1993

5. Analysis of HgTe/CdTe MOCVD grown superlattice epitaxial structures on GaAs by ion beam techniques;Journal of Crystal Growth;1992-02

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