Process-induced defects in VLSI-Reference-Cited by-同舟云学术

Process-induced defects in VLSI

Published:1991-04 Issue:1-4 Volume:55 Page:124-131
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kolbesen B.O.,Bergholz W.,Cerva H.,Fiegl B.,Gelsdorf F.,Zoth G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference34 articles.

1. See, e.g., IEEE 1989 International Electron Devices Meeting, Technical Digest.

3. VLSI Electronics: Microstructure Science;Kolbesen,1985

4. Proc. 15th Int. Conf. Defects in Semiconductors;Kolbesen,1989

5. Semiconductor Silicon 1990;Ohsawa,1990

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