The effect of boundary conditions in ion mixing of multilayered NiSi samples
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
2. Surface Modification and Alloying by Laser, Ion, and Electron Beams;Mayer,1983
3. Al‐Si contacts formed by ion irradiation and post‐annealing
4. Structural difference rule for amorphous alloy formation by ion mixing
5. Ion mixing and phase diagrams
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1. Ion beam induced mixing at Co/Si interface;Vacuum;2008-09
2. Mechanisms for Enhanced Formation of the C54 Phase of Titanium Silicide Ultra-Large-Scale Integration Contacts;Annual Review of Materials Science;2000-08
3. Aluminides and silicides formation by ion beam mixing of multilayers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04
4. Aluminides and silicides formation by ion beam mixing of multilayers**Work supported in part by CNPq and FAPERGS, Brazil.;Ion Implantation Technology–92;1993
5. Stability of C49 and C54 phases of TiSi2under ion bombardment;Journal of Applied Physics;1991-09
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