Basic mechanisms for the lattice-site occupation of metallic elements implanted into aluminium
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Ion Implantation;Poate,1980
2. Disassociation of Cadmium-Vacancy Complexes within the Displacement Spike
3. Influence of point defects on the lattice-site occupation of nonsoluble atoms implanted in vanadium
4. Lattice site occupation of non-soluble elements implanted in metals
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion implantation in TiO2: Effect of the charge state on the lattice site occupation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
2. Influence of vacancy mobility and volume size mismatch energy on the lattice site occupation of implanted species in beryllium single crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-03
3. Lattice location of bismuth implanted into beryllium single crystals;Materials Chemistry and Physics;1996-11
4. Mercury implanted into aluminium: Enhancement of the substitutional fraction by pre-implantation of kryption;Materials Chemistry and Physics;1994-07
5. Lattice site occupation of iodine implanted into aluminium;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
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