Chemical and physical processes during the formation of MoSi2 by ion-beam mixing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Silicides for VLSI Applications;Murarka,1983
2. Refractory metal silicides: Thin-film properties and processing technology
3. Low-resistance MOS technology using self-aligned refractory silicidation
4. A low-barrier Schottky process using MoSi2
5. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
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1. Phase formation and impurity effects in Ar+ ion irradiated Mo/Si thin film bilayer system;Surface and Interface Analysis;2012-12-06
2. Ion beam induced surface and interface engineering;Surface Science Reports;2011-03
3. Swift heavy ion beam mixing in Mo/Si system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-03
4. Tetragonal WSi2 formation by 0.5–5 MeV Xe-ion-beam irradiation at 250 °C and 450 °C;Journal of Applied Physics;1997-03
5. Ion beam mixing and liquid interdiffusion;Radiation Effects and Defects in Solids;1994-07
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