Effects of radiation on microelectronics and techniques for hardening
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. The Physics of SiO2 and its Interfaces;McLean,1978
2. Photon Energy Dependence of Radiation Effects in MOS Structures
3. Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing
4. The Effects of Test Conditions on MOS Radiation-Hardness Results
5. Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors
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1. Investigation on Electrical Properties of Printed Graphene Subjected to Aging, Ambient Environment and Gamma Radiation;IEEE Transactions on Device and Materials Reliability;2023
2. Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation;physica status solidi (a);2022-02-09
3. Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance;IEEE Transactions on Nuclear Science;2020-01
4. Single-ion irradiation: physics, technology and applications;Journal of Physics D: Applied Physics;2008-01-28
5. Multielectron Processes Induced by Charged Particles;Atomic Multielectron Processes;1998
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