Modification of metal Schottky contacts on silicon by ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
2. Linear dose dependence of ion beam mixing of metals on Si
3. Ion-beam mixing of metal-semiconductor eutectic systems
4. Metastable Au-Si alloy formation induced by ion-beam interface mixing
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1. Investigation of swift heavy ion irradiation effects on Au/CdTe and Au/CdZnTe Schottky barrier diode;Radiation Measurements;2008-01
2. Influence of swift heavy ion irradiation on electrical characteristics of Au/n-Si (1 0 0) Schottky barrier structure;Journal of Physics D: Applied Physics;2007-11-02
3. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01
4. The effect of silicon ion beam mixing on the barrier height of Sb/n-Si Schottky contacts;Applied Surface Science;1993-06
5. The activation energy of electrical conduction of ion beam mixed Sb/n-Si Schottky contacts;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
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