Characteristics of ion beam mixed and alloyed AuGe/Ni ohmic contacts to n-GaAs-Reference-Cited by-同舟云学术

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Characteristics of ion beam mixed and alloyed AuGe/Ni ohmic contacts to n-GaAs

Published:1988-12 Issue:3-4 Volume:35 Page:238-243
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Barnard W.O.,Strydom H.J.,Kruger M.M.,Schildhauer C.,Lacquet B.M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. The formation of silicides from thin films of some rare‐earth metals

2. R.W. Bower, US Patent No. 3,600 797 (August 1971).

3. Ion beam mixing of Pt/GaAs and formation of ohmic contacts

4. Ion beam mixing of Pt/GaAs and formation of ohmic contacts

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ cleaning of GaAs and AlxGa1−xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07

2. Electroless Ni as a Refractory Ohmic Contact for n ‐ InP;Journal of The Electrochemical Society;1993-07-01

3. The Relationship Between Microstructure and Contact Resistance in NiAuGe/ZrB2/Au Ohmic Contacts to GaAs.;MRS Proceedings;1990

4. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01

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