Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference8 articles.
1. Iterative determination of oxide thickness in MOS structures from one DC current/voltage pair
2. Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon
3. Conduction and charge storage in Cr-thin SiO2-pSi structures
4. Characterization of interface states in thin films of thermally grown SiO2
5. On tunneling in metal‐oxide‐silicon structures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Exploratory observations of post‐breakdown conduction in polycrystalline‐silicon and metal‐gated thin‐oxide metal‐oxide‐semiconductor capacitors;Journal of Applied Physics;1993-01
2. After-breakdown conduction through ultrathin SiO2 films in metal/insulator/semiconductor structures;Thin Solid Films;1991-02
3. On the oxide interface micro-roughness in MOS devices;Vacuum;1989-01
4. On the SiSiO2 interface roughness in VLSIMOS structures;Physica Status Solidi (a);1988-10-16
5. Model of Si–SiO2 interfaces based on ARXPS measurements;Journal of Materials Research;1988-06
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