The influence of adlayers on Schottky barrier formation; the adsorption of H2S and H2O on indium phosphide
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Unified defect model and beyond
2. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
3. The influence of intermediate adsorbed layers on the metal contacts formed to indium phosphide crystals
4. Electronic Structure of a Neutral Phosphorus Vacancy in GaP and InP
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1. Influence of humidity and hydrogen on the charge transport in p-InP diode structures with a palladium contact;Semiconductors;2000-03
2. n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen;Technical Physics Letters;1999-12
3. Ab initiostudy of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1×1)surfaces;Physical Review B;1998-02-15
4. An ARUPS/NEXAFS study of the adsorbate system;Applied Surface Science;1996-09
5. An x-ray standing-wave study of adsorption on InP(110);Journal of Physics: Condensed Matter;1996-01-01
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