Novel precursors for chemically assisted ion beam etching : reactions of dichloroethane on GaAs (100)
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference27 articles.
1. 8th International Conference of Ion Plasma Assisted Techniques;Jackman,1992
2. Raman scattering study of dry etching of GaAs: A comparison of chemically assisted ion beam etching and reactive ion etching
3. Focused Ga ion beam etching characteristics of GaAs with Cl2
4. Ion beam assisted etching of GaAs by low energy focused ion beam
5. In situ patterning of GaAs by focused ion beam
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion Beam Etching of Compound Semiconductors;Handbook of Advanced Plasma Processing Techniques;2000
2. Dry etching techniques for GaAs ultra-high vacuum chamber integrated processing;Microelectronic Engineering;1994-08
3. Ion beam-assisted etching of semiconductors: surface chemistry vs surface physics;Vacuum;1993-03
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