Interdiffusion and compound formation in the AuPdSi thin film system
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference16 articles.
1. Molecular beam epitaxial growth of GaAs millimeter-wave IMPATT diode material
2. Metallurgical properties and electrical characteristics of palladium silicide-silicon contacts
3. Palladium silicide formation observed by Auger electron spectroscopy
4. Atomic positions of surface atoms using high energy ion scattering
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Interdiffusion during heteroepitaxial Au growth on Pd thin films by electroless Au plating (ELGP) at room temperature;Applied Physics Express;2019-12-16
2. Silicon diffusion on LiF films deposited on Si(100) induced by electron beam;Thin Solid Films;2001-11
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