Surface roughening at the ZnTe/GaAs interface in stationary and sample rotation SIMS depth profiling
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference14 articles.
1. Sputtering by Ion Bombardment II;Carter,1983
2. Ion‐induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation
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4. Roughening instability and ion‐induced viscous relaxation of SiO2surfaces
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