Preparation of lead sulfide thin films by the atomic layer epitaxy process-Reference-Cited by-同舟云学术

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Preparation of lead sulfide thin films by the atomic layer epitaxy process

Published:1990-01 Issue:4-6 Volume:41 Page:1457-1459
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Leskelä M.,Niinistö L.,Niemela P.,Nykänen E.,Soininen P.,Tiitta M.,Vähäkangas J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference21 articles.

1. J C Bose, US Patent, No 755, 840 (1984).

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2. Advances in Atomic Layer Deposition of Metal Sulfides: From a Precursors Perspective;Chemistry of Materials;2022-08-08

3. MoO3, TiO2, and MoTiO5 based oxide semiconductor for photovoltaic applications;Turkish Journal of Chemistry;2022-01-01

4. Atomic Layer Deposition of PbI2 Thin Films;Chemistry of Materials;2019-01-16

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