Determination of iridium silicides using matrix effects in SIMS-Reference-Cited by-同舟云学术

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Determination of iridium silicides using matrix effects in SIMS

Published:1994-10 Issue:10-11 Volume:45 Page:1121-1122
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Blanco JM,Serrano JJ,Jiménez-Leube FJ,Rodríguez T,Wolters H

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference5 articles.

1. IrSi Schottky-barrier infrared detectors with wavelength response beyond 12 mu m

2. SIMS Proc VIII;Frentrup,1992

3. SIMS Proc VIII;Canteri,1992

4. Secondary Ion Mass Spectrometry;Wilson,1989

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characterization of iridium Schottky contacts to silicon: Early stages of silicidation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07

2. SIMS characterization of thin layers of IR and its silicides;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-06

3. Atomic Spectrometry Update—Atomic Mass Spectrometry and X-Ray Fluorescence Spectrometry;J. Anal. At. Spectrom.;1995

4. Atomic Spectrometry Updates—References;J. Anal. At. Spectrom.;1995

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