Historical overview of SIMOX-Reference-Cited by-同舟云学术

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Historical overview of SIMOX

Published:1991-01 Issue:5-6 Volume:42 Page:333-340
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Izumi Katsutoshi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference14 articles.

1. Formation of SiO2Films by Oxygen-Ion Bombardment

2. Proc 12th Int Symp Hosei Univ;Stephens,1987

3. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

4. Proc 6th Int Conf Ion Implant Tech;Ruffell,1986

5. Proc 11th Conf (1979 Int) Solid State Devices;Izumi,1979

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features of the surface morphology of CaF2/Si(100) films obtained by solid-phase epitaxy;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2016-11

2. SOI Materials and Devices;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

3. High-Precision Analysis of Oxygen Depth Profile in [sup 16]O[sup +]-Implanted Silicon Substrates by Spectroscopic Ellipsometry;Journal of The Electrochemical Society;2004

4. Frontiers of silicon-on-insulator;Journal of Applied Physics;2003-05

5. Formation of silicon on insulator using separation by implantation of oxygen with water plasma;Applied Physics Letters;2001-01

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