1. P.P. Fastykovsky, A.A. Mogilnitsky, Humidity sensors with silicon MOS tunnel structures, Proc. Conf. `Eurosensors X', Leuven, Belgium, Sept. 8–11, 1996.
2. Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si;Kar;Solid-St. Electron.,1972
3. Thin-oxide MOS capacitance studies of fast surface states;Hunter;Appl. Phys. Lett.,1970
4. S.M. Sze, Physics of semiconductor devices, Vol. 1, Mir, Moscow, 2nd edn., 1984, pp. 261–401.
5. Time variability of surface ionic conduction on humidity-sensitive SiO2 films;Uchikawa;Am. Ceram. Soc. Bull.,1985