Gas-sensitive GaAs-MESFETs-Reference-Cited by-同舟云学术

Gas-sensitive GaAs-MESFETs

Published:1996-08 Issue:1-3 Volume:34 Page:543-547
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Jaegle Martin,Steiner Klaus

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Recent developments in field-effect gas sensors;Lundström;Sensors and Actuators B,1995

2. Influence of the interaction between molecules on the response of metal-oxide-silicon carbide, MOSiC, sensor;Baranzahi,1996

3. MOS and Schottky diode gas sensors using transition metal electrodes;Poteat;J. Electron. Mater.,1983

4. Hydrogen sensor based on a Pt/GaAs Schottky diode;Lechuga;Sensors and Actuators B,1991

5. The ammonia sensitivity of Pt/GaAs Schottky barrier diodes;Lechuga;J. Appl. Phys.,1991

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