Dielectric properties of nanocrystalline AlN with respect to its crystal chemistry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry
Reference7 articles.
1. J.H. Edgar (ed.), Properties of Group III Nitrides-EMIS Data reviews Series No. 11 (INSPEC, IEE, 1994, UK).
2. In situ doping of a-cBN layers
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4. Properties and growth of β-BN (borazon) layers from a pulsed plasma under reduced pressure
5. Nanocrystalline wide band gap nitrides for electronics;Szmidt,1998
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