On electronic conduction in the pre-switching region of glassy semiconducting alloys As40Se30Te30 and As20Se50Te30-Reference-Cited by-同舟云学术

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On electronic conduction in the pre-switching region of glassy semiconducting alloys As40Se30Te30 and As20Se50Te30

Published:1988-04 Issue: Volume:100 Page:229-234
ISSN:0025-5416
Container-title:Materials Science and Engineering
language:en
Short-container-title:Materials Science and Engineering

Author:

Márquez E.,Villares P.,Jiménez-Garay R.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Caractérisation électrique de films amorphes de As50Te 50 irradiés par des ions lourds

2. Reversible Electrical Switching Phenomena in Disordered Structures

3. Physical Properties of Amorphous Materials;Adler,1985

4. A Consideration of Poole‐Frenkel Effect on Electric Conduction in Insulators

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the electrical conduction and current-controlled negative differential resistance with memory in bulk samples of glassy semiconductor Cu0.05As0.50Te0.45: NTC thermistor-type behaviour;Semiconductor Science and Technology;1988-11-01

2. On non-ohmic conduction and the threshold characteristics of a bulk-type switching device based on the chalcogenide glassy semiconductor As0.40Se0.30Te0.30;Journal of Non-Crystalline Solids;1988-10

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