On the spiral growth of polytype structures in SiC from a faulted matrix. III. Polytypes based on the 15R and 4H structures-Reference-Cited by-同舟云学术

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On the spiral growth of polytype structures in SiC from a faulted matrix. III. Polytypes based on the 15R and 4H structures

Published:1976-11 Issue:1 Volume:26 Page:53-63
ISSN:0025-5416
Container-title:Materials Science and Engineering
language:en
Short-container-title:Materials Science and Engineering

Author:

Pandey D.,Krishna P.

Publisher

Elsevier BV

Subject

General Engineering

Reference32 articles.

1. A Correlation between Theoretical Screw Dislocations and the Known Polytypes of Silicon Carbide

2. On the deduction of silicon-carbide polytypes from screw dislocations

3. Polytypes of SiC Crystals grown from Molten Silicon

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review article: silicon carbide. Structure, properties and processing;Cerâmica;2000-03

2. Crystallogeometrical Approach to Stacking-Fault Analysis in Ordered Alloys;Acta Crystallographica Section A Foundations of Crystallography;1998-07-01

3. Polytypism and Inorganic Crystal Growth and Reactivity;Science and Technology of Crystal Growth;1995

4. X-ray, optical and electrical study of melt-grown CdI2 single crystals;Crystal Research and Technology;1987-12

5. Origin of polytype structures in CdI2: Application of faulted matrix model revisited;Journal of Crystal Growth;1985-03

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