Simulations of dislocation nucleation from atomic size surface steps and grooves
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces
2. Growth morphology evolution and dislocation introduction in the heteroepitaxial system
3. J.W. Matthews (Ed.), Epitaxial Growth, Part B, Academic Press, New York, 1975, p. 559.
4. Defects associated with the accommodation of misfit between crystals
5. Dislocation injection in strained multilayer structures
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1. Atomistic study of the effect of crack tip ledges on the nucleation of dislocations in silicon single crystals at elevated temperature;Materials Science and Engineering: A;2011-05
2. An analysis of dislocation nucleation near a free surface;International Journal of Solids and Structures;2007-03
3. Internal stresses and the creep resistance of the directionally solidified ceramic eutectics;Materials Science and Engineering: A;2006-04
4. Atomistic mechanisms governing elastic limit and incipient plasticity in crystals;Nature;2002-07
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