1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high temperature applications: a review;Casady;Solid State Electron.,1996
2. Overview of SiC power electronics;Chelnokov;Diamond Relat. Mater.,1997
3. Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures;Ortolland;J. Appl. Phys.,1996
4. B. Tudor, Ph.D. Thesis, University “Politechnica” Bucharest, Romania, 1997.
5. G. Brezeanu, M. Badila, B. Tudor, J. Millan, P. Godignon, J.P. Chante, M.L. Locatelli, A. Lebedev, V. Banu, On the interpretation of high-frequency capacitance data of 6H-SiC boron doped p+n−n+ junctions, in: Proc. of ECSCRM'98, Montpellier, France, 1998, pp. 241–242 (To be published in Mater. Sci. Eng. B B56 (1999)).