Enhancement of the etch rate of CVD diamond by prior C and Ge implantation-Reference-Cited by-同舟云学术

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Enhancement of the etch rate of CVD diamond by prior C and Ge implantation

Published:2002-03 Issue:3-6 Volume:11 Page:837-840
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Leech P.W.,Reeves G.K.,Holland A.S.,Ridgway M.C.,Shanks F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Micropatterning of Chemical-Vapor-Deposited Diamond Films in Electron Beam Lithography

2. A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates

3. Etching of diamond with argon and oxygen ion beams

4. SPIE;Tianji;Diamond Optics III,1990

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Main Allotropes of Carbon;Sustainable Nanosystems Development, Properties, and Applications;2017

2. The effect of Au and O implantation on the etch rate of CVD diamond;Applied Surface Science;2004-01

3. Ion Beam Etching of CVD Diamond Enhanced by Prior Au and O Implantation.;MRS Proceedings;2002

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