Diamond deposition at low temperature by using CH4/H2 gas mixture-Reference-Cited by-同舟云学术

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Diamond deposition at low temperature by using CH4/H2 gas mixture

Published:2002-09 Issue:9 Volume:11 Page:1697-1702
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Dong Lifang,Ma Boqin,Dong Guoyi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Worldwide status of low temperature growth of diamond

2. Growth of diamond particles from methane-hydrogen gas

3. Diamond deposition on silicon surfaces heated to temperature as low as 135 °C

4. Synthesis of diamond by decomposition of methane in microwave plasma

5. Dependence of the cathodoluminescence of diamond films on deposition temperature

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Deposition of Diamond Films by MPCVD with Graphite Paste Additive;C;2024-04-16

2. Thermodynamic aspects of co-formation of different condensed phases from CH4–WCl6 gas mixtures diluted in H2;Applied Physics A;2018-08-23

3. Nanodiamond Films;Tetrahedrally Bonded Amorphous Carbon Films I;2018

4. Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition;Applied Surface Science;2011-02

5. Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition;Journal of Applied Physics;2010-05-15

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