Factors determining the diameter of silicon carbide whiskers prepared by chemical vapor deposition-Reference-Cited by-同舟云学术

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Factors determining the diameter of silicon carbide whiskers prepared by chemical vapor deposition

Published:1998-10 Issue:3 Volume:56 Page:256-261
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Leu Ing-Chi,Lu Yang-Ming,Hon Min-Hsiung

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference24 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Growth of beta-silicon carbide whiskers by the VLS process

3. Fiber Reinforced Ceramic Composites — Materials, Processing and Technology;Becher,1990

4. GaAs free‐standing quantum‐size wires

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5. Synthesis and characterization of nanostructured silicon carbide crystal whiskers by sol–gel process and carbothermal reduction;Ceramics International;2014-09

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