Etching anisotropy in two-dimensional SnS layered crystals using a thiol-amine solvent mixture as an etchant
Author:
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry
Reference38 articles.
1. Growth of (1 0 0), (0 1 0) and (0 0 1) β-Ga2O3 single crystals by vertical Bridgman method
2. Silicon dioxide sacrificial layer etching in surface micromachining
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