Nonvolatile resistive switching memories-characteristics, mechanisms and challenges-Reference-Cited by-同舟云学术

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Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

Published:2010-11 Issue: Volume:20 Page:1-15
ISSN:1002-0071
Container-title:Progress in Natural Science: Materials International
language:en
Short-container-title:Progress in Natural Science: Materials International

Author:

PAN Feng,CHEN Chao,WANG Zhi-shun,YANG Yu-chao,YANG Jing,ZENG Fei

Funder

National Hi-tech (R&D) Program of China

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Elsevier BV

Subject

General Materials Science

Reference116 articles.

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2. Nanoelectronics from the bottom up[J];LU;Nature Mater,2007

3. Is there an immortal memory? [J];SCOTT;Science,2004

4. FLOCKE A, NOLL T G, KUGELER C, et al. A fundamental analysis of nano-crossbars with non-linear switching materials and its impact on TiO2 as a resistive layer. In: 8th IEEE Conference on Nanotechnology (NANO) [J]. Arlington, USA, 2008: 319–322.

5. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges[J];WASER;Adv Mater,2009

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