A novel numerical approach to heterojunction bipolar transistors circuit simulation
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,Hardware and Architecture
Reference24 articles.
1. Physics of Semiconductor Devices;Sze,1981
2. High fmax AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier
3. A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test
4. High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits
5. Steady-state Method for Simulating Analog and Microwave Circuit;Kundert,1990
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2. Doping profile and Ge-dose optimization for silicon–germanium heterojunction bipolar transistors;Semiconductor Science and Technology;2009-09-22
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