Continuum based modeling of silicon integrated circuit processing: An object oriented approach

Author:

Law Mark E.,Cea Stephen M.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference38 articles.

1. M.E. Law, C.S. Rafferty, R.W. Dutton, SUPREM-IV User's Manual, Stanford University, 1988

2. Grid adaption near moving boundaries in two-dimensions for IC process simulation;Law;IEEE Trans. Computer-Aided Design,1995

3. C.C. Lin, M.E. Law, Mesh adaption and flux discretizations for dopant diffusion modeling, NUPAD-V, Honolulu, 1994, pp. 151–154

4. C.C. Lin, M.E. Law, Two-dimensional adaption and flux discretizations for dopant diffusion modeling, IEEE Trans. Computer-Aided Design 15 (1996)

5. M.E. Law, M. Cerrato, Improved local refinement algorithms for adaptive meshing of process simulation problems, SISPAD, Boston, 1997, p. 233

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