1. Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation
2. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation
3. B. Lenkeit, T. Lauinger, A.G. Aberle, R. Hezel, Comparison of remote versus direct PECVD silicon nitride passivation of phosphorus-diffused emitters of silicon solar cells, Proceedings of the second World Conference on Photovoltaic Energy Conversion, Vienna, 1998, pp. 1434–1437.
4. T. Bruton, Fabrication of the laser grooved Si solar cells, Proceedings of the First EU International Workshop on Crystalline Silion Solar Cells, Madrid, 1994, pp. 108–125.
5. J.E. Cotter, B.S. Richards, F. Ferrazza, C.B. Honsberg, T.W. Leong, H.R. Mehrvarz, G.A. Naik, S.R. Wenham, Design of a simplified emitter structure for Buried Contact solar cells, Proceedings of the Second World Conference on Photovoltaic Energy Conversion, Vienna, 1998, pp. 1511–1514.