X-ray diffuse scattering simulations in the Huang region for Si crystals with microdefects of orthorhombic symmetry

Author:

Borowski Janusz

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. X-ray High-Resolution Diffractometry for Studies of Diffuse Scattering in Semiconductor Materials;Crystal Research and Technology;2001-10

2. Orthorhombic microdefects in Si crystals;Journal of Physics D: Applied Physics;2001-05-01

3. High-resolution characterization of microdefects by X-ray diffuse scattering;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1999-10

4. X-ray diffuse scattering from extended microdefects of orthorhombic symmetry for Si single crystals;Journal of Alloys and Compounds;1999-05

5. X-ray diffuse scattering characterization of microdefects in highly Te-doped annealed GaAs crystals;Journal of Physics D: Applied Physics;1998-08-07

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