Pressure dependence of band gaps in PbS, PbSe and PbTe-Reference-Cited by-同舟云学术

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Pressure dependence of band gaps in PbS, PbSe and PbTe

Published:2000-08 Issue:2 Volume:18 Page:127-131
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Nabi Z.,Abbar B.,Méçabih S.,Khalfi A.,Amrane N.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference29 articles.

1. Magnetoresistance in PbS, PbSe, and PbTe at 295°, 77.4°, and 4.2°K

2. R. Allgaier, J. Appl. Phys. 32 (Suppl.) (1961) 2185

3. Anisotropy of the Fermi Surface ofp-Type PbTe

4. The effect of pressure on the properties of germanium and silicon

5. Band Structure of Gallium Phosphide from Optical Experiments at High Pressure

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1. Tuning band gaps in lead chalcogenides under pressure: implications for infrared detection applications;Physica Scripta;2024-06-21

2. Thermoelectric Properties of Mg3(Bi,Sb)2 under Finite Temperatures and Pressures: A First-Principles Study;Nanomaterials;2023-12-28

3. First-principles calculations of the dynamical and thermodynamic properties of lead chalcogenides PbX (X = S, Se, Te);Chalcogenide Letters;2022-11-21

4. Tomographic mapping of the hidden dimension in quasi-particle interference;Nature Communications;2021-11-18

5. Electronic and Thermoelectric Properties of Lead Sulfide PbS: DFT Approach;Advances in Green Energies and Materials Technology;2021

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