Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon-Reference-Cited by-同舟云学术

Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon

Published:2002-10 Issue:1-4 Volume:74 Page:57-63
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Hahn Giso,Geiger Patric,Sontag Detlef,Fath Peter,Bucher Ernst

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference12 articles.

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3. Ribbon growth on substrate (RGS)—a new approach to high speed growth of silicon ribbons for photovoltaics;Lange;J. Crystal Growth,1990

4. M. Spiegel, P. Fath, K. Peter, B. Buck, G. Willeke, E. Bucher, Detailed study on microwave induced remote hydrogen plasma passivation of multicrystalline silicon, Proceedings of the 13th EC PVSEC, Nizza, 1995, pp. 421–424.

5. G. Hahn, W. Jooss, M. Spiegel, P. Fath, G. Willeke, E. Bucher, Improvement of mc Si solar cells by Al-gettering and hydrogen passivation, Proceedings of the 26th IEEE PVSC, Anaheim, 1997, pp. 75–78.

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