Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode-Reference-Cited by-同舟云学术

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Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode

Published:2014-01 Issue: Volume:49 Page:369-383
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Fouad S.S.,Sakr G.B.,Yahia I.S.,Abdel-Basset D.M.,Yakuphanoglu F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference66 articles.

1. Physics of Semiconductor Devices;Sze,2007

2. Optical absorption and photoluminescence spectra of the ordered defect compound CuIn3Te5

3. Scattering of the charge carriers by ordered arrays of defect pairs in ternary chalcopyrite semiconductors

4. Optical properties and electronic band structure ofZnIn2Te4

5. FP-LAPW investigation of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite

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